MC-458CB646

DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 5 Description The MC-458CB646EFB and MC-458CB646PFB are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features 8,388,608 words by 64 bits organization Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) MC-458CB646EFB-A80 CL = 3 CL = 2 MC-458CB646EFB-A10 CL = 3 CL = 2 125 MHz 100 MHz 100 MHz 77 MHz 125 MHz 100 MHz 100 MHz 77 MHz Access time from CLK (MAX.) 6 ns 6 ns 6 ns 7 ns 6 ns 6 ns 6 ns 7 ns 5 MC-458CB646PFB-A80 CL = 3 CL = 2 5 MC-458CB646PFB-A10 CL = 3 CL = 2 Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Pulsed interface Possible to assert random column address in every cycle Quad internal banks controlled by BA0 and BA1 (Bank Select) Programmable burst-length (1, 2, 4, 8 and full page) Programmable wrap sequence (sequential / interleave) Programmable /CAS latency (2, 3) Automatic precharge and controlled precharge CBR (Auto) refresh and self refresh All DQs have 10 Ω ± 10 % of series resistor Single 3.3 V ± 0.3 V power supply LVTTL compatible ...