MBR340
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area metal−to...
MBR340
Preferred Device
Axial Lead Rectifier
This device employs the
Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Extremely Low VF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol Max Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM
40
V
VRWM
VR
Average Rectified Forward Current TA = 65°C
IO
(RqJA = 28°C/W, P.C. Board Mounting)
3.0
A
Non−Repetitive Peak Surge Current (Note 1)
IFSM
80
A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, TL = 75°C)
Operating and Storage Junction Temperature TJ, Tstg −65 to °C
Range (Reverse Voltage Applied) (Note 2)
+175
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient (see Note 5, Mounting Method 3)
RqJA
28 °C/W
Str...