MBR3050

MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. 0.245(6.2) 0.225(5.7) 0.645(16.4) 0.625(15.9) 0.323(8.2) 0.313(7.9) 0.078(1.98) 10° 30° 0.203(5.16) 0.193(4.90) TO-3P/ TO-247AD .17(4.3) 0.84(21.3) 0.82(20.8) 0.134(3.4) 0.114(2.9) 10° TYP BOTH SIDES 1 PIN 1 + PIN 3 CASE PIN 2 0.16(4.1) 0.14(3.5) 0.795(20.2) 0.775(19.7) 2 3 0.086(2.18) 0.076(1.93) 0.127(3.22) 0.117(2.97) 0.118(3.0) 0.108(2.7) 30 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO if(repetitive) if(surge) Average Rectified Current Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted 0.048(1.22) 0.044(1.12) 0.225(5.7) 0.205(5.2) 0.030(0.76) 0.020(0.51) Dimensions are in: inches (mm) Parameter Value 30 30 200 3.0 25 1.4 -65 to +175 -65 to +150 Units A A A W mW/°C °C/W °C °C PD RθJL Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor devic...