MBR1560

MBR1535CT- MBR1560CT MBR1535CT - MBR1560CT Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guarding for over voltage protection. 0.113(2.87) 0.103(2.62) 0.27(6.86) 0.23(5.84) 0.412(10.5) MAX 0.154(3.91) 0.148(3.74) 0.185(4.70) 0.175(4.44) 0.055(1.40) 0.045(1.14) 0.594(15.1) 0.587(14.9) TO-220AB 1 0.16(4.06) 0.14(3.56) 2 3 0.11(2.79) 0.10(2.54) PIN 1 + PIN 3 CASE PIN 2 0.037(0.94) 0.027(0.68) 0.56(14.22) 0.53(13.46) 15 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO if(repetitive) if(surge) PD RθJA RθJL Tstg TJ TA = 25°C unless otherwise noted 0.025(0.64) 0.105(2.67) 0.095(2.41) 0.014(0.35) Dimensions are in: inches (mm) Parameter Average Rectified Current .375 " lead length @ TA = 105°C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 105°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature Value 15 Units A 15 150 41.7 333 60 3.0 -65 to +175 -65 to +150 A A W mW/°C °C/W °C/W °C °C *These ratings are limiting values above which the serviceability of any semiconducto...