MBR1550CT

MBR1535CT- MBR1560CT MBR1535CT - MBR1560CT Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guarding for over voltage protection. PIN 1 + PIN 3 CASE PIN 2 1 2 3 TO-220AB Schottky Rectifiers Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM Tstg TJ TA = 25°C unless otherwise noted Parameter 1535 Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 105°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 35 Value 1545 45 15 150 -65 to +175 -65 to +150 1550 50 1560 60 Units V A A °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD RθJA RθJL Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Parameter Value 41.7 60 3.0 Units W °C/W °C/W Electrical Characteristics Symbol VF TA = 25°C unless otherwise noted Parameter 1535 Forward Voltage IF = 7.5 A, TC = 25°C IF = 7.5 A, TC = 125°C IF = 15 A, TC = 25°C IF = 15 A, TC = 125°C Reverse Current @ rated VR TA = 25°C TA = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 0.57 0.84 0.72 0.1 15 1.0 Device 1545 1550...