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MTW8N60E

Part Number	MTW8N60E
Manufacturer	Motorola
Description	TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
Published	Apr 26, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect ...
Datasheet	MTW8N60E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, conver...

Similar Datasheet

MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM - Motorola
MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM - ON Semiconductor

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