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LD261

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Description

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 ... 5 0.4 A A Radiant sensitive area (0.4 x 0.4) 1.4 1.0 Collector (BPX 81) Cathode (LD 261) 2.1 1.5 2.54 mm spacing 3.5 3.0 3.6 3.2 1) Detaching area for tools, flash not true to size. Approx. weight 0.03 g GEO06021 Maße in ...

Siemens Group

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