LC35W1000BTS-10U

Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion. Package Dimensions unit: mm 3205A-SOP32 [LC35W1000BM-70U/10U] 32 17 0.8 11.2 3.1max 0.15 0.2 (2.7) 20.5 Features Low-voltage operation: 2.7 to 3.6 V Wide operating temperature range: –40 to +85°C Access time: 70 ns (maximum): LC35W1000BM and LC35W1000BTS-70U. 100 ns (maximum): LC35W1000BM and LC35W1000BTS-10U. Low current drain Standby mode: 0.1 µA (typical*) at Ta = +25°C 10.0 µA (maximum) at Ta = –40 to +70°C 20.0 µA (maximum) at Ta = –40 to +85°C Data retention voltage: 2.0 to 3.6 V No clock required (fully static circuits) Input/output shared function pins, 3-state output pins Package 32-pin SOP (525 mil) plastic package: LC35W1000BM 32-pin TSOP (8 × 14 mm) plastic package (Normal): LC35W1000BTS 1 (0.73) 1.27 0.4 16 SANYO: SOP32 unit: mm 3228A-TSOP32DA [LC35W1000BTS-70U/10U] 32 17 0.5 8.0 12.4 (0.25) 0.08 (1.0) 0.5 1.2max 1 16 0....