64K (8192 words x 8 bits) SRAM
Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT...
Description
Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. They are fully CMOS devices employing 2-layer A1 wiring to realize high-speed access, low operating current consumption and very low standby current. They incorporate control signal inputs; OE for high-speed memory access, and 2 chip enables CE1 and CE2 for power-down and device selection. They are ideal for systems requiring high speed, low power and battry backup or for easy mamory expansion. The very low standby current means that backup can also be achieved using a capacitor.
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Common-pin input/outputs, 3-state output Clock not needed (fully-static RAM) Package SOP 28-pin (450mil) plastic package: LC3564RM series TSOP 28-pin (8 × 13.4mm) plastic package: LC3564RT series
Package Dimensions
unit: mm
3158 - SOP28
[LC3564RM]
Features
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Supply voltage range: 2.0 to 3.6V 3V operation: 2.7 to 3.6V Battery operation: 2.0 to 2.4V
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High-speed access time 3V operation - LC3564RM,RT-10LV: 100ns (max) - LC3564RM,RT-12LV: 120ns (max) - LC3564RM,RT-15LV: 150ns (max) Battery operation - LC3564RM,RT-10LV: 200ns (max) - LC3564RM,RT-12LV: 250ns (max) - LC3564RM,RT-15LV: 300ns (max)
unit: mm
3221 - TSOP28
[LC3564RT]
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Very-low standby current 3V operation - Ta ≤ 70°C: 1....
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