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LB1980H Dataheets PDF



Part Number LB1980H
Manufacturers Sanyo
Logo Sanyo
Description Three-Phase Brushless Motor Driver
Datasheet LB1980H DatasheetLB1980H Datasheet (PDF)

Ordering number : EN5974 Monolithic Digital IC LB1980H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview The LB1980H is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers. Package Dimensions unit: mm 3233-HSOP28H [LB1980H] Functions · 3-phase full-wave drive · Built-in torque ripple correction circuit (variable correction ratio) · Current limiter circuit · Upper and lower side output stage over-saturation prevention circuit that .

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Ordering number : EN5974 Monolithic Digital IC LB1980H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview The LB1980H is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers. Package Dimensions unit: mm 3233-HSOP28H [LB1980H] Functions · 3-phase full-wave drive · Built-in torque ripple correction circuit (variable correction ratio) · Current limiter circuit · Upper and lower side output stage over-saturation prevention circuit that does not require external capacitors. · FG amplifier · Thermal shutdown circuit SANYO: HSOP28H Allowable power dissipation, Pdmax — W Independent IC Ambient temperature, Ta — °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3098RM (OT) No. 5974-1/8 LB1980H Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Maximum output current Allowable power dissipation Operating temperature Storage temperature Symbol VCC max VS max IO max Pd max Topr Tstg Mounted on a 71.6 × 114.3 × 1.6 mm glass Epoxy printed circuit board Independent device Conditions Ratings 7 24 1.3 1.81 0.77 –20 to + 75 –55 to + 150 Unit V V A W W °C °C Allowable Operating Ranges at Ta = 25°C Parameter Supply voltage Hall input amplitude GSENSE pin input range Symbol VS VCC VHALL VGSENSE Between the Hall inputs With respect to the control system ground Conditions Ratings 5 to 22 4.5 to 5.5 ±30 to ±80 –0.20 to + 0.20 Unit V V mVo-p V Electrical Characteristics at Ta = 25°C, VCC = 5 V, VS = 15 V Parameter VCC supply current [Outputs] VOsat1 Output saturation voltage VOsat2 Output leakage current [FR] FR pin input threshold voltage FR pin input bias current [Control] CTLREF pin voltage CTLREF pin input range CTL pin input bias current CTL pin control start voltage CTL pin control Gm [Current Limiter] LIM current limit offset voltage LIM pin input bias current LIM pin current control level [Hall Amplifier] Hall amplifier input offset voltage Hall amplifier input bias current Hall amplifier common-mode input voltage range [TRC] Torque ripple correction ratio ADJ pin voltage [FG Amplifier] FG amplifier input offset voltage FG amplifier input bias current FG amplifier output saturation voltage FG amplifier voltage gain FG amplifier common-mode input voltage Voff (FG) IB (FG) Sink side, for the load provided by the VOsat (FG) internal pull-up resistor VG (FG) VGM (FG) For the open loop state with f = 10 kHz 41.5 0.5 44.5 –8 –100 0.5 47.5 4.0 +8 mV nA V dB V TRC VADJ For the high and low peaks in the Rf waveform when IO = 200 mA. (Rf = 0.5 Ω, with the ADJ pin open)*1 2.37 9 2.50 2.63 % V Voff (HALL) IB (HALL) VCM (HALL) 1.3 –6 1.0 +6 3.0 3.3 mV µA V Voff (LIM) IB (LIM) ILIM With Rf = 0.5 Ω, VCTL = 5 V, IO ≥ 10 mA, Hall input logic fixed (U, V, W = H, H, L) With VCTL = 5 V and the VCREF pin open With Rf = 0.5 Ω, VCTL = 5 V, VLIM = 2.06 V, Hall input logic fixed (U, V, W = H, H, L) 140 –2.5 830 900 970 200 260 mV µA mA VCREF VCREFIN IB (CTL) VCTL (ST) Gm (CTL) With VCTL = 5 V and the CTLREF pin open With Rf = 0.5 Ω, VLIM = 5 V, IO ≥ 10 mA, Hall input logic fixed (U, V, W = H, H, L) With Rf = 0.5 Ω, ∆IO = 200 mA, Hall input logic fixed (U, V, W = H, H, L) 2.00 0.46 2.15 0.58 2.05 1.50 2.15 2.25 3.50 4.0 2.30 0.70 V V µA V A/V VFSR IB (FSR) 2.25 –5.0 2.50 2.75 V µA IOleak IO = 500 mA, Rf = 0.5 Ω, Sink + Source VCTL = VLIM = 5 V (With saturation prevention) IO = 1.0 A, Rf = 0.5 Ω, Sink + Source VCTL = VLIM = 5 V (With saturation prevention) 2.1 2.6 2.6 3.5 1.0 V V mA Symbol ICC Conditions RL = ∞, VCTL = 0 V, VLIM = 0 V (Quiescent) Ratings min typ 12 max 18 Unit mA Notes : 1. The torque ripple correction ratio is determined as follows from the Rf voltage waveform. 2. Parameters that are indicated as design target values in the conditions column are not tested. Continued on next page. No. 5974-2/8 LB1980H Continued from preceding page. Parameter [Saturation] Saturation prevention circuit lower side voltage setting [TSD] TSD operating temperature Hysteresis width TSD ∆TSD Design target value*2 Design target value*2 180 20 °C °C The voltages between each OUT and VOs.


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