DISCRETE SEMICONDUCTORS
DATA SHEET
LAE4001R NPN microwave power transistor
Product specification Supersedes data of Jun...
DISCRETE SEMICONDUCTORS
DATA SHEET
LAE4001R
NPN microwave power
transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Self-aligned process entirely ion implanted and gold sandwich metallization Optimum temperature profile Excellent performance and reliability. APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.
2 4
handbook, halfpage
LAE4001R
PINNING - SOT100 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION
3
c b e
1
MAM312
Marking code: R8.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a common emitter class A circuit. MODE OF OPERATION CW linear amplifier f (GHz) 4 VCE (V) 15 IC (mA) 25 PL1 (mW) >85 Gpo (dB) >8.5 Zi (Ω) typ.7 + j22 ZL (Ω) typ. 10 + j38
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter vo...