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KBP2010

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2.0A BRIDGE RECTIFIER

W TE POWER SEMICONDUCTORS Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Relia...


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KBP2010

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W TE POWER SEMICONDUCTORS Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability ! Ideal for Printed Circuit Boards ! UL Recognized File # E157705 Mechanical Data ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: As Marked on Body ! Weight: 1.7 grams (approx.) ! Mounting Position: Any ! Marking: Type Number KBP200 – KBP2010 2.0A BRIDGE RECTIFIER LA BJ +~ ~ - C H E D K I G KBP Dim Min Max A 14.22 15.24 B 10.67 11.68 C 15.2 — D 4.57 5.08 E 3.60 4.10 G 2.16 2.67 H 0.76 0.86 I 1.52 — J 11.68 12.7 K 12.7 — L 3.2 x 45° Typical All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 50°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) Peak Reverse Current At Rated DC Blocking Voltage Rating for Fusing (t<8.3ms) @IF = 2.0A @TA = 25°C @TA = 100°C Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM I2t Cj RJA...




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