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KA5M0765RQC
Fairchild Power Switch(SPS)
Features
• • • • • • • • • • Precision fixed operating frequency (70KHz) Low start-up current (Typ. 100µA) Pulse by pulse current limiting Over load protection Over current protection Over voltage protection (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto-restart mode
Description
The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.
TO-220-5L
1
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
Internal Block Diagram
Vcc 3
+
27V
Drain 1
UVLO INTERNAL BIAS Good Logic
CLK
OVP OVP-out
V CC V REF 5uA 15V/9V 1mA
-
Vref
VOLTAG E Sense LIMIT CIRCUIT FET
OSC
Feedback 4 Soft Start 5
+
7.5V 5V OLP
1 4V 2.5R
S + LEB R
Q
R
TSD (TJ =150℃) OVP-out (VCC =27V) OCL (VS=1.4V)
VO F F S E T
VS Rsense Q R
S Power-on Reset /Auto-restart
2 GND
※ LEB : Leading Edge Blanking ※ OCL : Over Current Limit
Shutdown Latch
Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
KA5M0765RQC
Absolute Maximum Ratings
Parameter Maximum Drain voltage
(1)
Symbol VD,MAX VDGR VGS IDM
(3)
Value 650 650 ±30 28.0 570 7.0 5.6 30 −0.3 to VSD 140 1.11 −25 to +85 −55 to +150
Unit V V V ADC mJ ADC ADC V V W W/°C °C °C
Drain-Gate voltage (RGS=1MΩ) Gate-source (GND) voltage Drain current pulsed
(2)
Single pulsed avalanche energy
EAS ID ID VCC,MAX VFB PD Derating TA TSTG
Continuous drain current (TC=25°C) Continuous drain current (TC=100°C) Maximum Supply voltage Input voltage range Total power dissipation Operating ambient temperature Storage temperature
Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, starting Tj=25°C
2
KA5M0765RQC
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified) Parameter Drain-source breakdown voltage Symbol BVDSS Condition VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=3.5A VDS=50V, ID=3.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.8BVDSS Min. 650 3.0 Typ. 1.25 1120 125 25 25 70 105 65 38 6.5 18 Max. 50 200 1.6 60 150 220 140 50 nC nS pF Unit V µA µA Ω S
Zero g.