K4E661612B

K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - K4E661612B-TC/L(3.3V, 8K Ref., TSOP) - K4E641612B-TC/L(3.3V, 4K Ref., TSOP) Extended Data Out Mode operation 2 CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability Self-refresh capability (L-ver only) LVTTL(3.3V) compatible inputs and outputs Unit : mW Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) packages +3.3V±0.3V power supply Active Power Dissipation Speed -45 -50 -60 Refresh Cycles Part NO. K4E661612B* K4E641612B Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms RAS UCAS LCAS W 8K 360 324 288 4K 468 432 396 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc ...