256Mbit GDDR SDRAM
Target Spec
K4D551638F-TC 256M GDDR SDRAM
256Mbit GDDR SDRAM
4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous ...
Description
Target Spec
K4D551638F-TC 256M GDDR SDRAM
256Mbit GDDR SDRAM
4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
Revision 1.7 June 2004
Samsung Electronics reserves the right to change products or specification without notice.
- 1 -
Rev 1.7 (June 2004)
Target Spec
K4D551638F-TC
Revision History
Revision 1.7 (June 15, 2004) - Target Spec
Changed VDD/VDDQ of K4D551638F-TC33 from 2.8V + 0.1V to 2.8V(min)/2.95V(max)
256M GDDR SDRAM
Revision 1.6 (March 31, 2004) - Target Spec
AC Changes : Refer to the AC characteristics of page 13 and 14.
Revision 1.5 (March 18, 2004) - Target Spec
Added K4D551638F-TC33 in the data sheet.
Revision 1.4 (February 27, 2004) - Target Spec
Added K4D551638F-TC36/40 in the data sheet.
Revision 1.3 (December 5, 2003)
Changed VDD/VDDQ of K4D551638F-TC50 from 2.5V + 5% to 2.6V + 0.1V
Revision 1.2 (November 11, 2003)
"Wrtie-Interrupted by Read Function" is supported
Revision 1.1 (October 13, 2003)
Defined ICC7 value
Revision 1.0 (October 10, 2003)
Defined DC spec Changed part number of 16Mx16 GDDR F-die from K4D561638F-TC to K4D551638F-TC.
Revision 0.1 (October 2, 2003) - Target Spec
Added Lead free package part number in the data sheet. Removed K4D561638F-TC40 from the data sheet.
Revision 0.0 (July 2, 2003) - Target Spec
Defined Target Specification
- 2 -
Rev 1.7 (June 2004)
Target Spec
K4D551638F-TC 256M GDDR SDRAM
4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data ...
Similar Datasheet