K4D261638

K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 January 2004 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.2 (Jan. 2004) K4D261638F Revision History Revision 1.2 (January 30, 2004) Changed tWR & tWR_A of K4D261638F-TC25/2A/33/36 from 3tCK to 4tCK Changed tRC of K4D261638F-TC25 from 17tCK to 18tCK Changed tRC of K4D261638F-TC2A/33/36 from 15tCK to 16tCK Changed tRAS of K4D261638F-TC25 from 12tCK to 13tCK. Changed tRAS of K4D261638F-TC2A/33/36 from 10tCK to 11tCK. Changed tDAL of K4D261638F-TC25/2A/33/36 from 8tCK to 9tCK 128M GDDR SDRAM Revision 1.1 (January 7, 2004) Added K4D261638F-TC25 in the spec. Revision 1.0 (December 5, 2003) Revision 0.9 (October 14, 2003) - Preliminary Spec Defined DC spec Revision 0.1 (October 2, 2003) - Target Spec Added Lead free package part number in the datasheet Revision 0.0 (August 6, 2003) - Target Spec Defined Target Specification - 2 - Rev. 1.2 (Jan. 2004) K4D261638F 128M GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL FEATURES 2.5V + 5% power supply for device operation 2.5V + 5% power supply for I/O interface SSTL_2 compatible inputs/outputs 4 banks operation MRS cycle with address key programs -. Read latency 3, 4 and 5(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave) ...