H7N0307L

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features Low on-resistance RDS(on) =4.6 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 4 G 1 S 2 1 2 3 1 2 H7N0307LS 3 3 H7N0307LM 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel to Ambient Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Note 2 Note 1 Ratings 30 ±20 60 240 60 90 1.39 89 150 –55 to +150 Unit V V A A A W °C/W °C/W °C °C θch-c θch-a Tch Tstg Rev.4, May 2002, page 2 of 11 H7N0307LD, H7N0307LS, H7N0307LM Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr 40 — — — — — — — — — — — — Typ — — — — — 4.6 8.0 65 2500 650 350 40 7 8 20 300 70 20 0.92 60 Max — — ±10 10 2.5 5.8 11.5 — — — — — — — — — — — — — µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/ dt =50 A/µs Unit V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 ...