M4N26

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N26/D M4N26 6-Pin DIP Optoisolators Transistor Output The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most Economical Optoisolator Choice for Medium Speed, Switching Applications Meets or Exceeds All JEDEC Registered Specifications Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances I/O Interfacing Solid State Relays SCHEMATIC 6 1 STANDARD THRU HOLE STYLE 1 PLASTIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7 70 50 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 100 1.41 Volts mA mW mW/°C Symbol Valu...