EL-55L

Infrared Emitting Diodes(GaAs) K O D E N S H I EL-55L DIMENSIONS The EL-55L is a high-power GaAs IRED mounted in a clear plastic package. This LED emits infrared light through two plastic lenses on both sides of the package is ideally suited for use with VTR tape-end sensors. (Unit : mm) FEATURES ¶U Compact ¶ULow profile package ¶U Low-cost ¶USidelooking plastic package ¶ULong-lead type APPLICATIONS ¶UVTR type-end sensor MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2°…) 5 Symbol VR F I FP I PD Topr. Tstg. Tsol. Rating 5 50 1 75 -25~+85 -30~+85 260 Unit V mA A mW °… °… °… *1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2° 5…) Symbol VF R I Ct PO Îp ƒÎ °‚Ë Conditions F=50mA I VR=5V f=1MHz F=20mA I F=20mA I F=20mA I Min. Typ. 1.3 25 2.0 940 50 - Max. 1.5 10 Unit. V Ï A pF mW/sr nm nm deg. 0.7 - - - 1- Infrared Emitting Diodes(GaAs) EL-55L Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern - 2- ...