EL-1KL3

Infrared Emitting Diodes(GaAs) K O D E N S H I EL-1KL3 °§EL-1KL5 DIMENSIONS The EL-1KL3 and 1KL5 are high-power GaAs IREDs mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under demanding conditions such as use outdoors. (Unit : mm) FEATURES ¶UNarrow beam angle ¶U Durable ¶UHigh reliability in demanding environments APPLICATIONS ¶UOptical emitters ¶UOptical switches ¶U Encoders ¶USmoke sensors EL-1KL3 EL-1KL5 MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2°…) 5 Symbol VR F I FP I PC Topr. Tstg. Tsol. Rating 5 100 1 170 -40~+100 -55~+125 260 Unit V mA A mW °… °… °… *1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2° 5…) Symbol VF R I Ct PO Îp ƒÎ °‚Ë Conditions I= 1 0 0 m A VR=5V f=1MHz F=100mA I F=100mA I F=100mA I F EL-1KL3 Max. Min. Typ. 1.35 25 15 940 50 °æ8 1.7 10 EL-1KL5 Typ. Max. Min. 1.35 25 10 940 50 °æ5 1.7 10 Unit. V Ï A pF mW/sr nm nm deg. - 1- Infrared Emitting Diodes(GaAs) EL-1KL3 °§EL-1KL5 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. ...