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TDA7010T Dataheets PDF



Part Number TDA7010T
Manufacturers NXP
Logo NXP
Description FM radio circuit
Datasheet TDA7010T DatasheetTDA7010T Datasheet (PDF)

INTEGRATED CIRCUITS DATA SHEET TDA7010T FM radio circuit Product specification File under Integrated Circuits, IC01 September 1983 Philips Semiconductors Product specification FM radio circuit GENERAL DESCRIPTION TDA7010T The TDA7010T is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components is important (small dimensions and low costs). The IC has an FLL (Frequency-Locked-Loop) system with an intermediate frequency of 70 kHz. The i.f. selectiv.

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INTEGRATED CIRCUITS DATA SHEET TDA7010T FM radio circuit Product specification File under Integrated Circuits, IC01 September 1983 Philips Semiconductors Product specification FM radio circuit GENERAL DESCRIPTION TDA7010T The TDA7010T is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components is important (small dimensions and low costs). The IC has an FLL (Frequency-Locked-Loop) system with an intermediate frequency of 70 kHz. The i.f. selectivity is obtained by active RC filters. The only function which needs alignment is the resonant circuit for the oscillator, thus selecting the reception frequency. Spurious reception is avoided by means of a mute circuit, which also eliminates too noisy input signals. Special precautions are taken to meet the radiation requirements. The TDA7010T includes the following functions: • R.F. input stage • Mixer • Local oscillator • I.F. amplifier/limiter • Phase demodulator • Mute detector • Mute switch QUICK REFERENCE DATA Supply voltage range (pin 4) Supply current at VP = 4,5 V R.F. input frequency range Sensitivity for −3 dB limiting (e.m.f. voltage) (source impedance: 75 Ω; mute disabled) Signal handling (e.m.f. voltage) (source impedance: 75 Ω) A.F. output voltage at RL = 22 kΩ PACKAGE OUTLINE 16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 24. EMF Vo typ. typ. 200 mV 75 mV EMF typ. 1,5 µV VP IP frf 2,7 to 10 V typ. 8 mA 1,5 to 110 MHz September 1983 2 Philips Semiconductors Product specification FM radio circuit TDA7010T Fig.1 Block diagram. September 1983 3 Philips Semiconductors Product specification FM radio circuit RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Supply voltage (pin 4) Oscillator voltage (pin 5) Total power dissipation Storage temperature range Operating ambient temperature range VP V6-5 Tstg Tamb max. TDA7010T 12 V VP−0,5 to VP + 0,5 V −55 to + 150 °C 0 to + 60 °C see derating curve Fig.2 Fig.2 Power derating curve. D.C. CHARACTERISTICS VP = 4,5 V; Tamb 25 °C; measured in Fig.4; unless otherwise specified PARAMETER Supply voltage (pin 4) Supply current at VP = 4,5 V Oscillator current (pin 5) Voltage at pin 12 Output current at pin 2 Voltage at pin 2; RL = 22 kΩ IP I5 V12-14 I2 V2-14 − − − − − 8 280 1,35 60 1,3 − − − − − mA µA V µA V SYMBOL VP MIN. 2,7 TYP. 4,5 MAX. 10 V UNIT September 1983 4 Philips Semiconductors Product specification FM radio circuit TDA7010T A.C. CHARACTERISTICS Vp = 4,5 V; Tamb = 25 °C; measured in Fig.4 (mute switch open, enabled); frf = 96 MHz (tuned to max. signal at 5 µV e.m.f.) modulated with ∆f = ±22,5 kHz; fm = 1 kHz; EMF = 0,2 mV (e.m.f. voltage at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified. PARAMETER Sensitivity (see Fig.3) (e.m.f. voltage) for −3 dB limiting; muting disabled for −3 dB muting for S/N = 26 dB Signal handling (e.m.f. voltage) for THD < 10%; ∆f = ± 75 kHz Signal-to-noise ratio Total harmonic distortion at ∆f = ± 22,5 kHz at ∆f = ± 75 kHz AM suppression of output voltage (ratio of the AM output signal referred to the FM output signal) FM signal: fm = 1 kHz; ∆f = ± 75 kHz AM signal: fm = 1 kHz; m = 80% Ripple rejection (∆VP = 100 mV; f = 1 kHz) Oscillator voltage (r.m.s. value) at pin 5 Variation of oscillator frequency with supply voltage (∆VP = 1 V) Selectivity A.F.C. range Audio bandwidth at ∆Vo = 3 dB measured with pre-emphasis (t = 50 µs) A.F. output voltage (r.m.s. value) at RL = 22 kΩ Load resistance at VP = 4,5 V at VP = 9,0 V RL RL − − − − 22 47 kΩ kΩ Vo(rms) − 75 − mV B − 10 − kHz ∆fosc S+300 S−300 ∆frf − − − − 60 43 28 ± 300 − − − − kHz/V dB dB kHz AMS RR V5-4(rms) − − − 50 10 250 − − − dB dB mV THD THD − − 0,7 2,3 − − % % EMF S/N − − 200 60 − − mV dB EMF EMF EMF − − − 1,5 6 5,5 − − − µV µV µV SYMBOL MIN. TYP. MAX. UNIT September 1983 5 Philips Semiconductors Product specification FM radio circuit TDA7010T Fig.3 A.F. output voltage (Vo) and total harmonic distortion (THD) as a function of the e.m.f. input voltage (EMF) with a source impedance (RS) of 75 Ω: (1) muting system enabled; (2) muting system disabled. Conditions: 0 dB = 75 mV; frf = 96 MHz. for S + N curve: ∆f = ±22,5 kHz; fm = 1 kHz. for THD curve: ∆f = ±75 kHz; fm = 1 kHz. Note 1. The muting system can be disabled by feeding a current of about 20 µA into pin 1. September 1983 6 Philips Semiconductors Product specification FM radio circuit TDA7010T Fig.4 Test circuit; for printed-circuit boards see Figs 5 and 6. September 1983 7 Philips Semiconductors Product specification FM radio circuit TDA7010T Fig.5 Track side of printed-circuit board used for the circuit of Fig.4. Fig.6 Component side of printed-circuit board showing component layout used for the circuit of Fig.4. September 1983 8 Philips Semiconductors Product specification FM radio circuit PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body.


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