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TD62S011AFM Dataheets PDF



Part Number TD62S011AFM
Manufacturers Toshiba
Logo Toshiba
Description 1-Channel Sink-Current Driver
Datasheet TD62S011AFM DatasheetTD62S011AFM Datasheet (PDF)

TD62S011AFM TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62S011AFM 1-Channel Sink-Current Driver The TD62011AFM is a 1-channel noninverting sink-current driver with a PNP transistor at the first stage and a NPN transistor at the second stage. The driver incorporates output clamp diodes used to clamp the counter electromotive force which is generated when driving an inductive load. Because the driver operates by source input current, it is optimal for interfacing with sink-cur.

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TD62S011AFM TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62S011AFM 1-Channel Sink-Current Driver The TD62011AFM is a 1-channel noninverting sink-current driver with a PNP transistor at the first stage and a NPN transistor at the second stage. The driver incorporates output clamp diodes used to clamp the counter electromotive force which is generated when driving an inductive load. Because the driver operates by source input current, it is optimal for interfacing with sink-current driven general-purpose CMOS logic ICs and microprocessors. Also it is optimal for driving relays and LEDs. When using the driver, pay attention to the thermal conditions Features · · · · · · Ultra-small HSON6 package with heat sink on rear High output withstandard voltage: VCE (SUS) = 50 V (min) Large output current: IOUT = 100 mA (max) Built-in input resistor: RIN = 14 kΩ Input signal: Low Level Active Built-in output clamp diodes Weight: 0.017 g (typ.) Pin Connection (top view) Basic Circuit Diagram VCC OUTPUT 1 6 INPUT INPUT 10 kW 20 k9 COMMON 20 k9 1 k9 OUTPUT COMMON VCC 2 5 P-GND 3 4 GND P-GND GND Note 1: Diodes shown using dotted lines are parasitic. Do not use them. Note 2: When using the driver, connect the P-GND pin to the GND pin. Note 3: When using the driver, connect the P-GND pin to the heat sink on the rear of the package. 1 2001-12-05 TD62S011AFM Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Collector-emitter voltage Output withstand voltage Output current Input voltage Input current Clamp diode reverse voltage Clamp diode forward current Power dissipation Symbol VCC VCEO VCE (SUS) IOUT VIN IIN VR IF PD (Note 4) Rth (j-a) (Note 4) Saturated thermal resistance Rth (j-c) (Note 5) Operating temperature Storage temperature Topr Tstg 25 -40~85 -55~150 °C °C Rating -0.5~7.0 50 50 100 -0.5~7.0 -10 50 100 0.78 160 °C/W Unit V V V mA V mA V mA W Note 4: 114.3 ´ 76.2 ´ 1.6 mm glass epoxy film substrate Note 5: When an infinite heat sink is mounted. Cu heat dissipation pattern 100 mm 2 Recommended Operating Condition (Ta = -40~85°C) Characteristics Supply voltage Output withstand voltage Output current Input voltage Clamp diode reverse voltage Clamp diode forward current Symbol VCC VCEO IOUT VIN VR IF Test Circuit ¾ ¾ Test Condition Min 4.5 0 ¾ 0 ¾ ¾ Typ. 5.0 Max 5.5 50 100 5.5 50 100 Unit V V mA V V mA ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ 2 2001-12-05 TD62S011AFM Electrical Characteristics (Ta = 25°C) Characteristics Output leakage current Symbol ICEX Test Circuit 1 Test Condition VCC = VIN = 5.5 V, VOUT = 50 V VCC = 4.5 V, VIN = 0 V, IOUT = 100 mA VCC = 4.5 V, VIN = 0 V, IOUT = 50 mA VCC = 5.5 V, VIN = 0.4 V VCC = 5.5 V, VIN = 5.5 V VCC = 4.5 V, IOUT = 100 mA VR = 50 V IF = 100 mA VCC = 5.5 V, VIN = 0 V VCC = 5.5 V, VIN = VCC VCC = 5 V, VOUT = 50 V, RL = 625 W, CL = 15 pF Min ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ -0.44 Max 10 0.3 V 0.15 -0.63 -4.0 VCC - 3.7 10 1.3 6.0 100 mA mA V mA V mA mA ms Unit mA Output saturation vo.


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