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TCZT8012 Dataheets PDF



Part Number TCZT8012
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Emitter and Detector
Datasheet TCZT8012 DatasheetTCZT8012 Datasheet (PDF)

TCZT8012 Vishay Telefunken Matchable Pairs – Emitter and Detector Description Pairs of infrared-emitting diode and phototransistor, matched in their optical and electrical features. These pairs enable a lot of applications. They can be used both for transmissive or reflective sensor functions. The peak wavelength of the emitter is l = 950 nm. Applications D Generally used for industrial processing and controlling, end of tape detector Features D Miniature case with lens D Detector with optica.

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TCZT8012 Vishay Telefunken Matchable Pairs – Emitter and Detector Description Pairs of infrared-emitting diode and phototransistor, matched in their optical and electrical features. These pairs enable a lot of applications. They can be used both for transmissive or reflective sensor functions. The peak wavelength of the emitter is l = 950 nm. Applications D Generally used for industrial processing and controlling, end of tape detector Features D Miniature case with lens D Detector with optical filter, protected against ambient light 96 12316 D Detector case black for easy identification of the emitter and detector D Emitter-angle of half-intensity ± ϕ = 35° D Detector-angle of half sensitivity ± ϕ = 35° D Emitter and detector in sideview case D High CTR ≥ 5% Order Instruction Ordering Code TCZT8012–PAER Remarks Document Number 83773 Rev. A3, 20–Jul–99 www.vishay.com 1 (7) TCZT8012 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Value 6 60 1 100 100 Unit V mA A mW °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 70 7 50 100 150 100 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Operating temperature range Storage temperature range Soldering temperature Test Conditions Symbol Tamb Tstg Tsd Value –55 to +85 –55 to +100 260 Unit °C °C °C 2 mm from case, t ≤ 5 s Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Test Conditions IC = 1 mA IC = 100 mA VCE = 25 V, If = 0, E = 0 1) Symbol VF Cj Symbol VCEO VECO ICEO Symbol IC CTR VCEsat Min. Typ. 1.25 50 Max. 1.6 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Min. 70 7 Typ. Max. Unit V V nA 100 Emitter and Detector matched Parameter Collector current IC/ IF Collector emitter saturation voltage Cut-off frequency Test Conditions VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 0.1 mA Min. 1 0.5 Typ. 2 1 Max. 0.4 Unit mA mA V IF = 10 mA, VCE = 5 V, fC 110 kHz RL = 100 W Coupling capacitance f = 1 MHz Ck 0.3 pF 1) Characteristics are measurement at a separation distance of 4 mm (0.55’’) within a common axis of 0.5 mm (0.02’’) and parallel within 5° www.vishay.com 2 (7) Document Number 83773 Rev. A3, 20–Jul–99 TCZT8012 Vishay Telefunken Switching Characteristics Parameter Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) Symbol ton toff Typ. 10.0 8.0 Unit ms ms 0 IF IF +5V IC = 2 mA; adjusted through input amplitude IF 96 11698 RG = 50 W tp = 0.01 T tp = 50 ms 0 tp Channel I 100 W Channel II Oscilloscope 1 MW RL CL 20 pF IC t 50 W 15127 y x 100% 90% Figure 1. Test circuit 10% 0 tr td ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf t Figure 2. Switching times Document Number 83773 Rev. A3, 20–Jul–99 www.vishay.com 3 (7) TCZT8012 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 200 P tot – Total Power Dissipation ( mW ) 180 160 140 120 100 80 60 40 20 0 0 96 11947 10000 Photatransistor ICEO– Collector Dark Current, with open Base ( nA ) 1000 VCE=25V IF=0 100 IR-diode 10 1 25 50 75 100 95 11090 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 3. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 6. Collector Dark Current vs. Ambient Temperature 10 IC – Collector Current ( mA ) d=4mm VCE=5V 1 I F – Forward Current ( mA ) 100.0 10.0 0.1 1.0 0.01 0.1 0 96 11862 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 95 11098 0.1 1 10 100 IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 2.0 Figure 7. Collector Current vs. Forward Current 10 IC – Collector Current ( mA ) 1.5 VCE=5V IF=20mA d=4mm d=4mm IF=50mA 1 20mA 10mA 5mA 0.1 2mA 0.01 1.0 0.5 0 –25 95 11097 0 25 50 75 95 11099 0.1 1 10 100 Tamb – Ambient Temperature ( °C ) VCE – Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 (7) Figure 8. Collector Current vs. Collector Emitter Voltage Document Number 83773 Rev. A3, 20–Jul–99 TCZT8012 Vishay Telefunken 100 CTR – Current Transfer Ratio ( % ) I C – Collector Current ( mA ) 10 d 1 10 1 VCE=5V d=4mm 0.1 0.1 1 10 100 0.1 VCE=5V IF=20mA 0.001 1 10 d – Distance ( mm ) 100 95 11108 IF – Forward Current ( mA ) 95 11109 Figure 9. Current Transfer Ratio vs. Forward Curr.


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