TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
NC C
E
6
5
4
1 A (+) 17201_6
2 C (–)
3 NC
DVE
17201_4
DESCRIPTION The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual in line package.
ORDER INFORMATION (1)
PART TCDT1120 TCDT1122 TCDT1123 TCDT1124 TCDT1120G TCDT1122G TCDT1123G TCDT1124G
Note (1) G = leadform 10.16 mm; G is not marked on the body.
FEATURES • High common mode rejection • Four CTR groups available • Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Reinforced isolation provides circuit protection against
electrical shock (safety class II) • Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5
AGENCY APPROVALS • UL1577, file no. E52744, double protection • BSI IEC 60950 IEC 60065 • DIN EN 60747-5-5 (VDE 0884) • FIMKO • cUL tested to CSA 22.2 bulletin 5A
REMARKS CTR > 40 %, DIP-6 CTR 63 % to 125 %, DIP-6 CTR 100 % to 200 %, DIP-6 CTR 160 % to 320 %, DIP-6 CTR > 40 %, DIP-6 CTR 63 % to 125 %, DIP-6 CTR 100 % to 200 %, DIP-6 CTR 160 % to 320 %, DIP-6
Document Number: 83532 Rev. 1.7, 28-Oct-09
For technical questions, contact:
[email protected]
www.vishay.com 789
TCDT1120, TCDT1120G
Vishay Semiconductors Optocoupler, Phototransistor Output
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT
tp ≤ 10 μs
VR
5
V
IF
60
mA
IFSM
3
A
Pdiss
100
mW
Tj
125
°C
Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER
VCEO
70
V
VECO
7
V
IC
50
mA
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
Isolation test voltage (RMS)
t=1s
VISO
5000
VRMS
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Soldering temperature (2)
2 mm from case, t ≤ 10 s
Tsld
260
°C
Notes
(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTCS (1)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage Junction capacitance OUTPUT
IF = 50 mA
VF
VR = 0 V, f = 1 MHz
Cj
1.25
1.6
V
50
pF
Collector base voltage Collector emitter voltage Emitter collector voltage Collector ermitter cut-off current COUPLER
IC = 100 μA IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 A
VCBO
90
VCEO
90
VECO
7
ICEO
V
V
V
150
nA
Collector emitter saturation voltage Cut-off frequency Coupling capacitance
IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω
f = 1 MHz
VCEsat fc Ck
0.3
V
110
kHz
0.3
pF
Note
(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
www.vishay.com 790
For technical questions, contact:
[email protected]
Document Number: 83532 Rev. 1.7, 28-Oct-09
TCDT1120, TCDT1120G
Optocoupler, Phototransistor Output Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 1 mA IC/IF
VCE = 5 V, IF = 10 mA
PART TCDT1120 TCDT1120G TCDT1122 TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G TCDT1122 TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G
SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR
MIN. 10 15 30 60 40 63 100 160
TYP.
MAX.
125 200 320
UNIT % % % % % % % %
MAXIMUM SAFETY RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current OUTPUT
IF
130
mA
Power dissipation COUPLER
Pdiss
265
mW
Rated impulse voltage Safety temperature
VIOTM Tsi
6
kV
150
°C
Note
(1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discha.