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TCDT1120G Dataheets PDF



Part Number TCDT1120G
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Optocoupler
Datasheet TCDT1120G DatasheetTCDT1120G Datasheet (PDF)

TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output NC C E 6 5 4 1 A (+) 17201_6 2 C (–) 3 NC DVE 17201_4 DESCRIPTION The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual in line package. ORDER INFORMATION (1) PART TCDT1120 TCDT1122 TCDT1123 TCDT1124 TCDT1120G TCDT1122G TCDT1123G TCDT1124G Note (1) G = leadform 10.16 mm; G is not marked on the body. FEATURES • High common.

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TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output NC C E 6 5 4 1 A (+) 17201_6 2 C (–) 3 NC DVE 17201_4 DESCRIPTION The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual in line package. ORDER INFORMATION (1) PART TCDT1120 TCDT1122 TCDT1123 TCDT1124 TCDT1120G TCDT1122G TCDT1123G TCDT1124G Note (1) G = leadform 10.16 mm; G is not marked on the body. FEATURES • High common mode rejection • Four CTR groups available • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Reinforced isolation provides circuit protection against electrical shock (safety class II) • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 AGENCY APPROVALS • UL1577, file no. E52744, double protection • BSI IEC 60950 IEC 60065 • DIN EN 60747-5-5 (VDE 0884) • FIMKO • cUL tested to CSA 22.2 bulletin 5A REMARKS CTR > 40 %, DIP-6 CTR 63 % to 125 %, DIP-6 CTR 100 % to 200 %, DIP-6 CTR 160 % to 320 %, DIP-6 CTR > 40 %, DIP-6 CTR 63 % to 125 %, DIP-6 CTR 100 % to 200 %, DIP-6 CTR 160 % to 320 %, DIP-6 Document Number: 83532 Rev. 1.7, 28-Oct-09 For technical questions, contact: [email protected] www.vishay.com 789 TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT tp ≤ 10 μs VR 5 V IF 60 mA IFSM 3 A Pdiss 100 mW Tj 125 °C Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER VCEO 70 V VECO 7 V IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Pdiss 150 mW Tj 125 °C Isolation test voltage (RMS) t=1s VISO 5000 VRMS Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Soldering temperature (2) 2 mm from case, t ≤ 10 s Tsld 260 °C Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTCS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage Junction capacitance OUTPUT IF = 50 mA VF VR = 0 V, f = 1 MHz Cj 1.25 1.6 V 50 pF Collector base voltage Collector emitter voltage Emitter collector voltage Collector ermitter cut-off current COUPLER IC = 100 μA IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 A VCBO 90 VCEO 90 VECO 7 ICEO V V V 150 nA Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz VCEsat fc Ck 0.3 V 110 kHz 0.3 pF Note (1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 790 For technical questions, contact: [email protected] Document Number: 83532 Rev. 1.7, 28-Oct-09 TCDT1120, TCDT1120G Optocoupler, Phototransistor Output Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 10 mA PART TCDT1120 TCDT1120G TCDT1122 TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G TCDT1120 TCDT1120G TCDT1122 TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR MIN. 10 15 30 60 40 63 100 160 TYP. MAX. 125 200 320 UNIT % % % % % % % % MAXIMUM SAFETY RATINGS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current OUTPUT IF 130 mA Power dissipation COUPLER Pdiss 265 mW Rated impulse voltage Safety temperature VIOTM Tsi 6 kV 150 °C Note (1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER Partial discha.


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