SD1855 (TCC20L25)
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
2.0 GHz 20 VOLTS CLASS ...
SD1855 (TCC20L25)
RF & MICROWAVE
TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
2.0 GHz 20 VOLTS CLASS A OVERLAY GEOMETRY GOLD METALLIZED DIE COMMON EMITTER CONFIGURATION POUT = 2.5W MIN. WITH 6.0 dB GAIN
.230 2LFL (M151) hermetically sealed ORDER CODE SD1855 BRANDING TCC20L25
PIN CONNECTION
DESCRIPTION The SD1855 is a silicon
NPN planar
transistor designed for high gain linear performance at 2.0 GHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD1855 can be used for applications sucha as telecommunications, radar, ECM, space and other commercial and military systems. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCES VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
40 25 3.5 0.5 20.6 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
8.5
°C/W
1/3
SD1855 (TCC20L25)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVEBO hFE
IC = 2mA IC = 5mA IE = 2mA VCE = 5V
IE = 0mA IB = 0mA IC = 0mA IC = 400mA
40 25 3.5 15
— — — —
— — — 150
V V V —
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT* G P*
Note:
f = 2.0 GHz f = 2.0 GHz
VCE = 20 V VCE = 20 V
ICQ = 440 mA ICQ = 440 m...