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TC7WU04FU Dataheets PDF



Part Number TC7WU04FU
Manufacturers Toshiba
Logo Toshiba
Description 3 Inverter
Datasheet TC7WU04FU DatasheetTC7WU04FU Datasheet (PDF)

3 Inverters TC7WU04FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WU04FU, TC7WU04FK The TC7WU04 is a high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. As the internal circuit is composed of single stage inverter, it can be applied for crystal oscillation. All inputs are equipped with protection circuits against static discharge or transien.

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3 Inverters TC7WU04FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WU04FU, TC7WU04FK The TC7WU04 is a high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. As the internal circuit is composed of single stage inverter, it can be applied for crystal oscillation. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 6 ns (typ.) at VCC = 4.5 V • Low power dissipation: ICC = 1 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 10% VCC (min) • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 6 V Marking TC7WU04FU 7WU 04 Part No. Lot No. TC7WU04FU TC7WU04FK Weight SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) (SM8) (US8) TC7WU04FK W U 04 Part No. Start of commercial production 1991-09 1 2014-11-18 TC7WU04FU/FK Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature range Lead temperature (10 s) VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL −0.5 to 7 V −0.5 to VCC + 0.5 V −0.5 to VCC + 0.5 V ±20 mA ±20 mA ±25 mA ±25 mA 300 (SM8) mW 200 (US8) −65 to 150 °C 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Pin Configuration (top view) VCC 1Y 3A 2Y 8 7 6 5 1 2 3 4 1A 3Y 2A GND Logic Diagram (1) 1A 2A (3) 3A (6) (7) 1 1Y (5) 2Y (2) 3Y Truth Table A Y L H H L 2 2014-11-18 Operating Ranges Characteristics Supply voltage Input voltage Output voltage Operating temperature range Symbol VCC VIN VOUT Topr Rating 2 to 6 0 to VCC 0 to VCC −40 to 85 TC7WU04FU/FK Unit V V V °C Electrical Characteristics DC Electrical Characteristics Characteristics Symbol Test Condition Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max 2.0 1.7   1.7  High level VIH  4.5 3.6   3.6  Input voltage 6.0 4.8   4.8  V 2.0   0.3  0.3 Low level VIL  4.5   0.9  0.9 6.0   1.2  1.2 2.0 1.8 2.0  1.8  VIN = VIL IOH = −20 µA 4.5 4.0 4.5  4.0  High level VOH 6.0 5.5 5.9  5.5  Output voltage IOH = −4 mA VIN = GND 4.5 4.18 4.31  4.13  IOH = −5.2 mA 6.0 5.68 5.80  5.63  V 2.0  0 0.2  0.2 VIN = VIH IOL = 20 µA 4.5  0 0.5  0.5 Low level VOL 6.0  0.1 0.5  0.5 IOL = 4 mA 4.5  0.17 0.26  0.33 VIN = VCC IOL = 5.2 mA 6.0  0.18 0.26  0.33 Input leakage current IIN VIN = VCC or GND 6.0   ±0.1  ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 6.0   1.0  10.0 µA 3 2014-11-18 AC Electrical Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C) Characteristics Symbol Test Condition Output transition time tTLH  tTHL Propagation delay time tpLH  tpHL TC7WU04FU/FK Min Typ. Max Unit  4 8 ns  4 8 ns AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns) Characteristics Symbol Test Condition Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max 2.0  30 75  95 Output transition time tTLH tTHL  4.5  8 15  19 ns 6.0  7 13  16 2.0  18 60  75 Propagation delay time tpLH tpHL  4.5  6 12  15 ns 6.0  5 10  13 Input capacitance CIN Power dissipation capacitance CPD   9 15  15 pF (Note)  13    pF Note: CPD is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to test circuit). Average operating current can be obtained by the equation hereunder. ICC (opr) = CPD • VCC • fIN + ICC/3 (per gate) AC Electrical Characteristics Test Circuit AC Electrical Characteristics Test Waveform VCC 6 ns 6 ns 50 Ω VIN P.G. VOUT CL 90% VIN 50% 10% tpHL VOUT 90% 50% 10% tTHL Operating Cu.


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