Document
3 Inverters
TC7WU04FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WU04FU, TC7WU04FK
The TC7WU04 is a high speed CMOS Inverter fabricated with silicon gate CMOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
As the internal circuit is composed of single stage inverter, it can be applied for crystal oscillation.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features
• High speed: tpd = 6 ns (typ.) at VCC = 4.5 V • Low power dissipation: ICC = 1 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 10% VCC (min) • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 6 V
Marking
TC7WU04FU 7WU 04
Part No. Lot No.
TC7WU04FU
TC7WU04FK
Weight SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.)
(SM8) (US8)
TC7WU04FK
W U 04
Part No.
Start of commercial production
1991-09
1
2014-11-18
TC7WU04FU/FK
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current
Power dissipation
Storage temperature range Lead temperature (10 s)
VCC VIN VOUT IIK IOK IOUT ICC
PD
Tstg TL
−0.5 to 7
V
−0.5 to VCC + 0.5
V
−0.5 to VCC + 0.5
V
±20
mA
±20
mA
±25
mA
±25
mA
300 (SM8) mW
200 (US8)
−65 to 150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Pin Configuration (top view)
VCC 1Y 3A 2Y
8
7
6
5
1
2
3
4
1A 3Y 2A GND
Logic Diagram
(1) 1A
2A
(3)
3A
(6)
(7)
1
1Y
(5)
2Y
(2)
3Y
Truth Table
A
Y
L
H
H
L
2
2014-11-18
Operating Ranges
Characteristics
Supply voltage Input voltage Output voltage Operating temperature range
Symbol
VCC VIN VOUT Topr
Rating
2 to 6 0 to VCC 0 to VCC −40 to 85
TC7WU04FU/FK
Unit V V V °C
Electrical Characteristics
DC Electrical Characteristics
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = −40
to 85°C
Unit
VCC (V) Min Typ. Max Min Max
2.0
1.7
1.7
High level
VIH
4.5
3.6
3.6
Input voltage
6.0
4.8
4.8
V
2.0
0.3
0.3
Low level
VIL
4.5
0.9
0.9
6.0
1.2
1.2
2.0
1.8 2.0
1.8
VIN = VIL IOH = −20 µA
4.5
4.0 4.5
4.0
High level VOH
6.0
5.5 5.9
5.5
Output voltage
IOH = −4 mA VIN = GND
4.5 4.18 4.31 4.13
IOH = −5.2 mA 6.0
5.68 5.80
5.63
V
2.0
0
0.2
0.2
VIN = VIH IOL = 20 µA
4.5
0
0.5
0.5
Low level
VOL
6.0
0.1 0.5
0.5
IOL = 4 mA
4.5
0.17 0.26 0.33
VIN = VCC
IOL = 5.2 mA
6.0
0.18 0.26 0.33
Input leakage current
IIN VIN = VCC or GND
6.0
±0.1 ±1.0 µA
Quiescent supply current
ICC VIN = VCC or GND
6.0
1.0
10.0 µA
3
2014-11-18
AC Electrical Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C)
Characteristics
Symbol
Test Condition
Output transition time
tTLH
tTHL
Propagation delay time
tpLH
tpHL
TC7WU04FU/FK
Min Typ. Max Unit
4
8
ns
4
8
ns
AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns)
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = −40
to 85°C
Unit
VCC (V) Min Typ. Max Min Max
2.0
30
75
95
Output transition time
tTLH tTHL
4.5
8
15
19
ns
6.0
7
13
16
2.0
18
60
75
Propagation delay time
tpLH tpHL
4.5
6
12
15
ns
6.0
5
10
13
Input capacitance
CIN
Power dissipation capacitance
CPD
9
15
15
pF
(Note)
13
pF
Note: CPD is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to test circuit). Average operating current can be obtained by the equation hereunder. ICC (opr) = CPD • VCC • fIN + ICC/3 (per gate)
AC Electrical Characteristics Test Circuit
AC Electrical Characteristics Test Waveform
VCC
6 ns
6 ns
50 Ω
VIN P.G.
VOUT CL
90% VIN 50%
10%
tpHL
VOUT
90% 50% 10%
tTHL
Operating Cu.