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TC7SZ04AFE Dataheets PDF



Part Number TC7SZ04AFE
Manufacturers Toshiba
Logo Toshiba
Description Inverter
Datasheet TC7SZ04AFE DatasheetTC7SZ04AFE Datasheet (PDF)

Inverter TC7SZ04AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ04AFE Features • High output drive: ±24 mA (min.) @VCC = 3 V • Super high speed operation: tPD 2.4 ns (typ.) @VCC = 5 V, 50 pF • Operation voltage range: VCC = 1.8~5.5 V • Supply voltage data retention: VCC = 1.5~5.5 V • Latch-up performance: ±500 mA or higher • ESD performance: Human body model > ±2000 V Machine model > ±200 V • Power down protection is provided on all inputs. Weight: 0.003 g (typ.) .

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Inverter TC7SZ04AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ04AFE Features • High output drive: ±24 mA (min.) @VCC = 3 V • Super high speed operation: tPD 2.4 ns (typ.) @VCC = 5 V, 50 pF • Operation voltage range: VCC = 1.8~5.5 V • Supply voltage data retention: VCC = 1.5~5.5 V • Latch-up performance: ±500 mA or higher • ESD performance: Human body model > ±2000 V Machine model > ±200 V • Power down protection is provided on all inputs. Weight: 0.003 g (typ.) • Matches the performance of TC74LCX series when operated at 3.3 V VCC Marking R5 Type Name Pin Assignment (top view) NC 1 IN A 2 5 VCC GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10 s) VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL −0.5~6 V −0.5~6 V −0.5~VCC + 0.5 V −20 mA ±20 mA ±50 mA ±50 mA 150 mW −65~150 °C 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-08-04 Truth Table A Y L H H L Operating Ranges Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time Note 1: Data retention only. Logic Diagram TC7SZ04AFE Symbol VCC VIN VOUT Topr dt/dv Rating Unit 1.8~5.5 1.5~5.5 (Note 1) 0~5.5 0~VCC −40~85 0~20 (VCC = 1.8 V, 2.5 V ± 0.2 V) 0~10 (VCC = 3.3 V ± 0.3 V) 0~5 (VCC = 5.5 V ± 0.5 V) V V V °C ns/V 2 2012-08-04 Electrical Characteristics DC Characteristics Characteristics Symbol Test Circuit High-level input voltage VIH ⎯ Low-level input voltage VIL ⎯ Test Condition ⎯ ⎯ High-level output voltage VOH IOH = −100 μA ⎯ VIN = VIL IOH = −8 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA Low-level output voltage VOL Input leakage current IIN Quiescent supply current ICC IOL = 100 μA ⎯ VIN = VIH IOL = 8 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA ⎯ VIN = 5.5 V or GND ⎯ VIN = VCC or GND TC7SZ04AFE VCC (V) Ta = 25°C Ta = −40~85°C Unit Min Typ. Max Min Max 1.8 0.75 × VCC ⎯ ⎯ 0.75 × VCC ⎯ V 2.3~5.5 0.7 × VCC ⎯ ⎯ 0.7 × VCC ⎯ 1.8 ⎯ 2.3~5.5 ⎯ 1.8 1.7 ⎯ 0.25 × VCC ⎯ 0.25 × VCC V ⎯ 0.3 × VCC ⎯ 0.3 × VCC 1.8 ⎯ 1.7 ⎯ 2.3 2.2 2.3 ⎯ 2.2 ⎯ 3.0 2.9 3.0 ⎯ 2.9 ⎯ 4.5 4.4 4.5 ⎯ 4.4 ⎯ V 2.3 1.9 2.15 ⎯ 1.9 ⎯ 3.0 2.4 2.8 ⎯ 2.4 ⎯ 3.0 2.3 2.68 ⎯ 2.3 ⎯ 4.5 3.8 4.2 ⎯ 3.8 ⎯ 1.8 ⎯ 0 0.1 ⎯ 0.1 2.3 ⎯ 0 0.1 ⎯ 0.1 3.0 ⎯ 0 0.1 ⎯ 0.1 4.5 ⎯ 0 0.1 ⎯ 0.1 V 2.3 ⎯ 0.1 0.3 ⎯ 0.3 3.0 ⎯ 0.15 0.4 ⎯ 0.4 3.0 ⎯ 0.22 0.55 ⎯ 0.55 4.5 ⎯ 0.22 0.55 ⎯ 0.55 0~5.5 ⎯ ⎯ ±1 ⎯ ±10 μA 5.5 ⎯ ⎯ 2 ⎯ 20 μA 3 2012-08-04 TC7SZ04AFE AC Characteristics (Unless otherwise specified, input: tr = tf = 3 ns) Characteristics Symbol Test Circuit Test Condition VCC (V) 1.8 Ta = 25°C Ta = −40~85°C Unit Min Typ. Max Min Max 2.0 4.4 9.5 2.0 10.0 Propagation delay time tPLH tPHL CL = 15 pF, RL = 1 MΩ ⎯ CL = 50 pF, RL = 500 Ω 2.5 ± 0.2 0.8 2.9 6.5 0.8 7.0 3.3 ± 0.3 0.5 2.1 4.5 0.5 4.7 ns 5.0 ± 0.5 0.5 1.8 3.9 0.5 4.1 3.3 ± 0.3 1.5 2.9 5.0 1.5 5.2 5.0 ± 0.5 0.8 2.4 4.3 0.8 4.5 Input capacitance CIN ⎯ Power dissipation capacitance CPD ⎯ ⎯ 0~5.5 ⎯ 4 ⎯ ⎯ ⎯ pF 3.3 (Note) 5.5 ⎯ 21 ⎯ ⎯ ⎯ pF ⎯ 34 ⎯ ⎯ ⎯ Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC (opr) = CPD・VCC・fIN + ICC 4 2012-08-04 Package Dimensions TC7SZ04AFE Weight: 0.003 g (typ.) 5 2012-08-04 TC7SZ04AFE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if rep.


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