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W39L040
512K × 8 CMOS FLASH MEMORY
1. GENERAL DESCRIPTION
The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L040 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.
2. FEATURES
• Single 3.3-volt operations − 3.3-volt Read − 3.3-volt Erase − 3.3-volt Program
• Fast Program operation: − Byte-by-Byte programming: 50 µS (max.)
• Fast Erase operation: − Chip Erase cycle time: 100 mS (max.) − Sector Erase cyc.