Document
Transistors with built-in Resistor
UNR421x Series (UN421x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits ■ Features
• Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping
0.75 max.
4.0±0.2
2.0±0.2 (0.8) 3.0±0.2
■ Resistance by Part Number
• • • • • • • • • • • • • • • UNR4210 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR421D UNR421E UNR421F UNR421K UNR421L (UN4210) (UN4211) (UN4212) (UN4213) (UN4214) (UN4215) (UN4216) (UN4217) (UN4218) (UN4219) (UN421D) (UN421E) (UN421F) (UN421K) (UN421L) (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 10 kΩ 4.7 kΩ (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ
0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
15.6±0.5
(0.8)
7.6 2 3
1
1: Emitter 2: Collector 3: Base NS-B1 Package
Internal Connection
R1 B R2 E C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 −55 to +150 Unit V V mA mW °C °C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003 SJH00020BED
1
UNR421x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current UNR4210/4215/4216/4217 UNR4213 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.1 0.2 0.5 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 20 30 35 60 80 160 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ VCC = 5 V, VB = 10 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ fT R1 VCB = 10 V, IE = − 2 mA, f = 200 MHz −30% 150 0.51 1.0 4.7 10 22 47 R1/R2 0.08 0.17 0.37 0.8 1.70 1.70 3.7 0.10 0.21 0.47 1.0 2.13 2.14 4.7 0.12 0.25 0.57 1.2 2.60 2.60 5.7 +30% MHz kΩ 4.9 0.2 460 0.25 V V V Typ Max Unit V V µA µA mA
(Collector open) UNR4212/4214/421D/421E UNR4211 UNR421F/421K UNR4219 UNR4218/421L Forward current UNR4218/421K/421L transfer ratio UNR4219/421D/421F UNR4211 UNR4212/421E UNR4213/4214 UNR4210 */4215 */4216 */ 4217 * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR4213/421K UNR421D UNR421E Transition frequency Input resistance UNR4218 UNR4219 UNR4216/421F/421L UNR4211/4214/4215/421K UNR4212/4217 UNR4210/4213/421D/421E Resistance ratio UNR4218/4219 UNR4214 UNR421F UNR4211/4212/4213/421L UNR421K UNR421E UNR421D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460
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SJH00020BED
UNR421x Series
Common characteristics chart PT Ta
400
Total power dissipation PT (mW)
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR4210 IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 400
hFE IC
VCE = 10 V
60
IB = 1.0 mA 0.9 mA 0.8 mA
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
300 Ta = 75°C 25°C 200 −25°C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1
20
10
0
0 1 10 100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25°C
IO VIN
104 VO = 5 V Ta = 25°C
100
VIN IO
VO = 0.2 V Ta = 25°C
5
Output current IO (µA)
4
3
Input voltage VIN (V)
103
10
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJH00020BED
3
UNR421x Series
Characteristics charts of UNR4211 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
Forward current transfer ratio hFE
10
300
Ta = 75°C
80
0.3 mA
1 25°C 0.1 −25˚C
200 25°C 100 −25°C
0.2 mA 40
Ta = 75°C
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
0
1 10 100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25°C
104
IO VIN
VO = 5 V Ta = 2.