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UNR4218 Dataheets PDF



Part Number UNR4218
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planar type
Datasheet UNR4218 DatasheetUNR4218 Datasheet (PDF)

Transistors with built-in Resistor UNR421x Series (UN421x Series) Silicon NPN epitaxial planar type Unit: mm For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping 0.75 max. 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 ■ Resistance by Part Number • • • • • • • • • • • • • • • UNR4210 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR421D UNR421E UNR.

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Transistors with built-in Resistor UNR421x Series (UN421x Series) Silicon NPN epitaxial planar type Unit: mm For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping 0.75 max. 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 ■ Resistance by Part Number • • • • • • • • • • • • • • • UNR4210 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR421D UNR421E UNR421F UNR421K UNR421L (UN4210) (UN4211) (UN4212) (UN4213) (UN4214) (UN4215) (UN4216) (UN4217) (UN4218) (UN4219) (UN421D) (UN421E) (UN421F) (UN421K) (UN421L) (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 10 kΩ 4.7 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 (0.8) 7.6 2 3 1 1: Emitter 2: Collector 3: Base NS-B1 Package Internal Connection R1 B R2 E C ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 −55 to +150 Unit V V mA mW °C °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00020BED 1 UNR421x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current UNR4210/4215/4216/4217 UNR4213 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.1 0.2 0.5 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 20 30 35 60 80 160 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ VCC = 5 V, VB = 10 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ fT R1 VCB = 10 V, IE = − 2 mA, f = 200 MHz −30% 150 0.51 1.0 4.7 10 22 47 R1/R2 0.08 0.17 0.37 0.8 1.70 1.70 3.7 0.10 0.21 0.47 1.0 2.13 2.14 4.7 0.12 0.25 0.57 1.2 2.60 2.60 5.7  +30% MHz kΩ 4.9 0.2 460 0.25 V V V  Typ Max Unit V V µA µA mA (Collector open) UNR4212/4214/421D/421E UNR4211 UNR421F/421K UNR4219 UNR4218/421L Forward current UNR4218/421K/421L transfer ratio UNR4219/421D/421F UNR4211 UNR4212/421E UNR4213/4214 UNR4210 */4215 */4216 */ 4217 * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR4213/421K UNR421D UNR421E Transition frequency Input resistance UNR4218 UNR4219 UNR4216/421F/421L UNR4211/4214/4215/421K UNR4212/4217 UNR4210/4213/421D/421E Resistance ratio UNR4218/4219 UNR4214 UNR421F UNR4211/4212/4213/421L UNR421K UNR421E UNR421D Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 2 SJH00020BED UNR421x Series Common characteristics chart PT  Ta 400 Total power dissipation PT (mW) 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR4210 IC  VCE Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 400 hFE  IC VCE = 10 V 60 IB = 1.0 mA 0.9 mA 0.8 mA Forward current transfer ratio hFE 50 Collector current IC (mA) 10 300 Ta = 75°C 25°C 200 −25°C 100 40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 30 0.3 mA 1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 20 10 0 0 1 10 100 0 2 4 6 8 10 12 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25°C IO  VIN 104 VO = 5 V Ta = 25°C 100 VIN  IO VO = 0.2 V Ta = 25°C 5 Output current IO (µA) 4 3 Input voltage VIN (V) 103 10 102 1 2 10 0.1 1 0 0.1 1 10 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00020BED 3 UNR421x Series Characteristics charts of UNR4211 IC  VCE IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 hFE  IC 400 VCE = 10 V 160 Collector current IC (mA) 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA Forward current transfer ratio hFE 10 300 Ta = 75°C 80 0.3 mA 1 25°C 0.1 −25˚C 200 25°C 100 −25°C 0.2 mA 40 Ta = 75°C 0.1 mA 0 0 2 4 6 8 10 12 0.01 0.1 0 1 10 100 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25°C 104 IO  VIN VO = 5 V Ta = 2.


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