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UNR2216 Dataheets PDF



Part Number UNR2216
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planar transistor
Datasheet UNR2216 DatasheetUNR2216 Datasheet (PDF)

Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit: mm For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number • UNR2210 • U.

  UNR2216   UNR2216


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Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit: mm For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number • UNR2210 • UNR2211 • UNR2212 • UNR2213 • UNR2214 • UNR2215 • UNR2216 • UNR2217 • UNR2218 • UNR2219 • UNR221D • UNR221E • UNR221F • UNR221K • UNR221L • UNR221M • UNR221N • UNR221T • UNR221V • UNR221Z Marking Symbol (R1) (UN2210) 8L 47 kΩ (UN2211) 8A 10 kΩ (UN2212) 8B 22 kΩ (UN2213) 8C 47 kΩ (UN2214) 8D 10 kΩ (UN2215) 8E 10 kΩ (UN2216) 8F 4.7 kΩ (UN2217) 8H 22 kΩ (UN2218) 8I 0.51 kΩ (UN2219) 8K 1 kΩ (UN221D) 8M 47 kΩ (UN221E) 8N 47 kΩ (UN221F) 8O 4.7 kΩ (UN221K) 8P 10 kΩ (UN221L) 8Q 4.7 kΩ (UN221M) EL 2.2 kΩ (UN221N) EX 4.7 kΩ (UN221T) EZ 22 kΩ (UN221V) FD 2.2 kΩ (UN221Z) FF 4.7 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B R2 E C ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 200 150 −55 to +150 Unit V V mA mW °C °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00010CED 0 to 0.1 0.4±0.2 5˚ 1 UNR221x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR2210/2215/2216/2217 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = −6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.1 0.2 0.4 0.5 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 6 20 30 35 60 60 80 80 160 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.5 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ VCC = 5 V, VB = 10 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ fT R1 VCB = 10 V, IE = −2 mA, f = 200 MHz −30% 150 0.51 1.0 2.2 4.7 10 22 47 +30% MHz kΩ 4.9 0.2 V V 400 460 0.25 V 200 20  Typ Max Unit V V µA µA mA cutoff current UNR2213 (Collector open) UNR2212/2214/221D/ 221E/221M/221N/221T UNR221Z UNR2211 UNR221F/221K UNR2219 UNR2218/221L/221V Forward current UNR221V transfer ratio UNR2218/221K/221L UNR2219/221D/221F UNR2211 UNR2212/221E UNR221Z UNR2213/2214/221M UNR221N/221T UNR2210*/2215*/2216*/2217* Collector-emitter saturation voltage UNR221V Output voltage high-level Output voltage low-level UNR2213/221K UNR221D UNR221E Transition frequency Input resistance UNR2218 UNR2219 UNR221M/211V UNR2216/221F/221L/ 221N/221Z UNR2211/2214/2215/221K UNR2212/2217/221T UNR2210/2213/221D/221E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 2 SJH00010CED UNR221x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Resistance ratio UNR221M UNR221N UNR2218/2219 UNR221Z UNR2214 UNR221T UNR221F UNR221V UNR2211/2212/2213/221L UNR221K UNR221E UNR221D 0.8 1.70 1.70 3.7 0.37 0.17 0.08 Symbol R1/R2 Conditions Min Typ 0.047 0.1 0.10 0.21 0.21 0.47 0.47 1.0 1.0 2.13 2.14 4.7 1.2 2.60 2.60 5.7 0.57 0.25 0.12 Max Unit  Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR2210 IC  VCE Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 hFE  IC 400 VCE = 10 V 60 IB = 1.0 mA 0.9 mA 0.8 mA Forward current transfer ratio hFE 50 Collector current IC (mA) 10 300 Ta = 75°C 25°C 200 −25°C 100 40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 30 0.3 mA 1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 20 10 0 0 1 10 100 0 2 4 6 8 10 12 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00010CED 3 UNR221x Series Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25°C IO  VIN 104 VO = 5 V Ta = 25°C 100 VIN  IO VO = 0.2 V Ta = 25°C 5 Output current IO (µA) 4 3 102 Input voltage VIN (V) 103 10 1 2 10 0.1 1 0 0.1 1 10 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 .


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