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S1A2221A02

Samsung semiconductor

DUAL LOW NOISE EQUALIZER AMPLIFIER

DUAL LOW NOISE EQUALIZER AMPLIFIER S1A2221A02 INTRODUCTION The S1A2221A02 is a monolithic integrated circuit consistin...


Samsung semiconductor

S1A2221A02

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Description
DUAL LOW NOISE EQUALIZER AMPLIFIER S1A2221A02 INTRODUCTION The S1A2221A02 is a monolithic integrated circuit consisting of a 2-channel pre-amplifier in a 8-pin plastic single in line package. The minimum operating voltage is 2.5V, Making it suitable for low voltage application. 8−SIP FEATURES Wide operating supply voltage: VDD = 2. 5V − 6V Low noise (VHI = 1.0µV: Typ) High channel separation Good ripple rejection ratio Minimum number of external parts required ORDERING INFORMATION Device S1A2221A02-I0U0 Package 8-SlP Operating Temperature −20°C − +70°C BLOCK DIAGRAM AMP1 AMP2 1 INPUT1 2 NF1 3 OUTPUT1 4 VCC 5 GND 6 OUTPUT2 7 NF2 8 INPUT2 1 S1A2221A02 DUAL LOW NOISE EQUALIZER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Supply Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC PD TOPR TSTG Value 7.5 200 − 20 − +70 − 40 − +125 Unit V mW °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = 4V, RL = 10kΩ, RG = 600Ω, f = 1kHz, NAB, unless otherwise specified) Characteristic Quiescent Circuit Current Open Loop Voltage Gain Closed Loop Voltage Gain Output Voltage Total Harmonic Distortion Input Resistance Equivalent Input Noise Voltage Cross Talk Symbol ICCQ GVO GVC VO THD RI VNI CT VO = 0.2V THD = 1% VO = 0.2V − RG = 2.2kΩ BW (−3dB) = 15Hz − 30kHz RG = 2. 2kΩ Test Conditions VI = 0 − Min. − 65 33 0.4 − − − 50 Typ. 2.0 80 35 0.7 0.1 150 1.0 65 Max. 6.0 − 37 − 0.3 − 2.0 − Unit mA dB dB V % kΩ V dB 2 DUAL LOW NO...




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