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S1A2201X01

Samsung semiconductor

1.2W AUDIO POWER AMP

1.2W AUDIO POWER AMP S1A2201X01 INTRODUCTION The S1A2201X01 is a monolithic integrated audio amplifier. It is designed...


Samsung semiconductor

S1A2201X01

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Description
1.2W AUDIO POWER AMP S1A2201X01 INTRODUCTION The S1A2201X01 is a monolithic integrated audio amplifier. It is designed for the audio frequency class B amplifier. 8−DIP−300 FEATURES Wide range of operating supply voltage: VCC = 3V − 14V Medium output power PO = 1.2W at VCC = 9V, RL = 8Ω, THD = 10% Low quiescent circuit current (ICCQ = 4mA: Typ) Good ripple rejection Minimum number of external parts required ORDERING INFORMATION Device S1A2201X01-D0B0 Package 8−DIP−300 Operating Temperature −20°C − + 70°C BLOCK DIAGRAM RIPPLE 8 BOOTSTRAP 7 VCC 6 OUTPUT 5 – + 1 CB 2 NF 3 INPUT 4 GND Figure 1. 1 S1A2201X01 1.2W AUDIO POWER AMP ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Supply Voltage Output Peak Current Power Dissipation Operating Temperature Storage Temperature Symbol VCC IPK PD TOPR TSTG Value 16 1.5 1.25 − 20 — + 70 − 40 — + 150 Unit V A W °C °C ELECTRICAL CHARACTERISTICS ( Ta = 25°C, VCC = 9V, f = 1kHz, RG = 600Ω, RF = 120Ω, RL = 8Ω, unless otherwise specified ) Characteristic Quiescent Circuit Current Symbol ICCQ VI = 0 VCC = 9V, RL = 4Ω, THD = 10% VCC = 9V, RL = 8Ω, THD = 10% Output Power PO VCC = 6V, RL = 4Ω, THD = 10% VCC = 6V, RL = 8Ω, THD =10% VCC = 12V, RL = 8Ω, THD =10% Total Harmonic Distortion Open Loop Voltage Gain Closed Loop Voltage Gain Input Resistance Output Noise Voltage THD GVO GVC RI VNO R G = 10kΩ BW (−3dB) = 50Hz − 20kHz PO = 500mW RF = 0Ω R F = 120Ω − Test Conditions Min. − − 0.9 − 0.4 − − − 33 − − Typ. 4 1.6 1.2...




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