S10VB60

SHINDENGEN Bridge Diode Square In-line Package S10VB60 600V 10A OUTLINE DIMENSIONS Case : S10VB Unit : mm RATINGS ●　Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=2.4℃/W Average Rectified Forward Current Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque IFSM I2t Vdis TOR 50Hz sine wave, R-load, Ta=40℃ Without heatsink 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 1ms≦t＜10ms　Ｔc=25℃ Terminals to case, AC 1 minute （Recommended torque : 0.5N･m） Ratings Unit -40～150 ℃ 150 ℃ 600 V 10 A 3.7 200 A 110 A2ｓ 2 kV 0.8 N･m Ratings Unit Max.1.05 V Max.10 μA Max.2.8 ℃/W ●　Electrical Characteristics (Tl=25℃) Item Symbol Conditions VF IF=5A, Forward Voltage Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current θjl junction to lead 　 Thermal Resistance Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S10VBx Forward Voltage Forward Current IF [A] 10 Tl=150°C [TYP] Tl=25 °C [TYP] 1 Pulse measurement per diode 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] S10VBx 30 Forward Power Dissipation Forward Power Dissipation PF [W] 25 SIN 20 15 10 5 0 0 2 4 6 8 10 12 14 Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave S10VBx 12 Derating Curve Average Rectified Forward Current IO [A] 10 * θ fa = 2.4°C/W l 8 l=...