SD5000
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
GOLD METALLIZATI...
SD5000
RF & MICROWAVE
TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P OUT = 1.5 W MIN. WITH 9.5 dB GAIN
.280 4L STUD (M122) epoxy sealed ORDER CODE SD5000 BRANDING S10A015
PIN CONNECTION
DESCRIPTION The SD5000 is a
NPN Silicon
Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter
VCBO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
50 50 3.5 1.0 7.0 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 25 °C/W
1/4
November 1992
SD5000
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCES BVCEO ICBO hFE DYNAMIC
Symbol
IC = 10mA IE = 5mA IC = 10mA IC = 5mA VCB = 28V VCE = 5V IC = 100mA
50 3.5 50 23 — 18
— — — — 0.2 —
— — — — — 200
V V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT 1dB f = 1 GHz GP VSWR ...