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S-AV10H

Toshiba Semiconductor

VHF RF Power Amplifier Module

S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module · · · High gain: Po ≥ 1...



S-AV10H

Toshiba Semiconductor


Octopart Stock #: O-365368

Findchips Stock #: 365368-F

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Description
S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module · · · High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40% S-AV10L 135~155 MHz S-AV10H 150~175 MHz Unit: mm Maximum Ratings (Tc = 25°C) Characteristics DC supply voltage DC supply voltage Input power Operating case temperature range Storage temperature range Symbol VCC VCON Pi Tc (opr) Tstg Rating 16 16 300 -30~100 -40~110 Unit V V mW °C °C JEDEC JEITA TOSHIBA ― ― 5-53P Electrical Characteristics (Tc = 25°C) Characteristics Frequency range Output power Power gain Total efficiency Input VSWR Harmonics Symbol frange Po GP hT VSWRin HRM VCC = 15 V, VCON = 12.5 V Load mismatch ¾ Po = 15 W (Pi = adjust) VSWR load 20: 1 all phase Tc = -30~80°C Power slump ¾ VCC = 12.5 V, Pi = 200 mW Po = 14 W (@Tc = 25°C) VCC = 12.5 V, Pi = 200 mW Stability ¾ VCON = 0~12.5 V VSWR Load 3: 1 all phase Pi = 200 mW VCC = 12.5 V, VCON = 12.5 V ZG = ZL = 50 W Test Condition ¾ Weight: 35 g (typ.) Min 135 14 18.5 40 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ Max 175 ¾ ¾ ¾ 2 -25 Unit MHz W dB % ¾ dB No degradation ¾ ¾ 0.8 ¾ dB All spurious output than 60dB below desired signal ¾ 1 2003-03-27 S-AV10L,S-AV10H Caution This product has intersetting cap. Please pay attention for exceeding stress and foreign matter in your application. And not to take away the cap. Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush or dissolve chemically. Dispose of this product properly...




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