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BUK104-50S Dataheets PDF



Part Number BUK104-50S
Manufacturers NXP
Logo NXP
Description PowerMOS transistor Logic level TOPFET
Datasheet BUK104-50S DatasheetBUK104-50S Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK104-50L/S BUK104-50LP/SP QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on.

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Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK104-50L/S BUK104-50LP/SP QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 5 V VIS = 7 V PARAMETER Protection supply voltage BUK104-50L BUK104-50S MAX. 50 15 40 150 125 100 NOM. 5 10 UNIT V A W ˚C mΩ mΩ UNIT V V APPLICATIONS General controller for driving lamps motors solenoids heaters SYMBOL VPSN FEATURES Vertical power DMOS output stage Low on-state resistance Logic and protection supply from separate pin Low operating supply current Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by protection supply Protection circuit condition indicated by flag pin 5 V logic compatible input level Separate input pin for higher frequency drive ESD protection on input, flag and protection supply pins Over voltage clamping for turn off of inductive loads Both linear and switching operation are possible FUNCTIONAL BLOCK DIAGRAM PROTECTION SUPPLY DRAIN FLAG O/V CLAMP POWER MOSFET INPUT LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT263 PIN 1 2 3 4 5 tab input flag drain protection supply source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL D TOPFET P F I P 1 2345 leadform 263-01 Fig. 2. Type numbers ending with suffix P refer to leadform 263-01. S Fig. 3. January 1993 1 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDSS VIS VFS VPS ID ID IDRM Ptot Tstg Tj Tsold PARAMETER Voltages Continuous off-state drain source voltage1 Continuous input voltage Continuous flag voltage Continuous supply voltage Currents Continuous drain current Continuous drain current Repetitive peak on-state drain current Thermal Total power dissipation Storage temperature Junction temperature2 Lead temperature Tmb ≤ 25 ˚C Tmb ≤ 100 ˚C Tmb ≤ 25 ˚C Tmb = 25 ˚C continuous during soldering CONDITIONS VIS = 0 V VIS = BUK104-50L/S BUK104-50LP/SP MIN. 0 0 0 -55 - MAX. 50 11 11 11 7 5 15 13 9.5 8.5 60 54 40 150 150 250 UNIT V V V V V A A A W ˚C ˚C ˚C OVERLOAD PROTECTION LIMITING VALUES With the protection supply connected, TOPFET can protect itself from two types of overload over temperature and short circuit load. SYMBOL VPSP PARAMETER Protection supply voltage 3 An n-MOS transistor turns on between the input and source to quickly discharge the power MOSFET gate capacitance. CONDITIONS For internal overload protection to remain latched while the control circuit is high, external.


BUK104-50LP BUK104-50S BUK104-50SP


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