Document
Philips Semiconductors
Product specification
PowerMOS transistor Logic level TOPFET
DESCRIPTION
Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
BUK104-50L/S BUK104-50LP/SP
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 5 V VIS = 7 V PARAMETER Protection supply voltage BUK104-50L BUK104-50S MAX. 50 15 40 150 125 100 NOM. 5 10 UNIT V A W ˚C mΩ mΩ UNIT V V
APPLICATIONS
General controller for driving lamps motors solenoids heaters
SYMBOL VPSN
FEATURES
Vertical power DMOS output stage Low on-state resistance Logic and protection supply from separate pin Low operating supply current Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by protection supply Protection circuit condition indicated by flag pin 5 V logic compatible input level Separate input pin for higher frequency drive ESD protection on input, flag and protection supply pins Over voltage clamping for turn off of inductive loads Both linear and switching operation are possible
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY DRAIN
FLAG
O/V CLAMP POWER MOSFET
INPUT
LOGIC AND PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT263
PIN 1 2 3 4 5 tab input flag drain protection supply source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
D TOPFET P F I
P
1 2345
leadform 263-01
Fig. 2. Type numbers ending with suffix P refer to leadform 263-01.
S
Fig. 3.
January 1993
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDSS VIS VFS VPS ID ID IDRM Ptot Tstg Tj Tsold PARAMETER Voltages Continuous off-state drain source voltage1 Continuous input voltage Continuous flag voltage Continuous supply voltage Currents Continuous drain current Continuous drain current Repetitive peak on-state drain current Thermal Total power dissipation Storage temperature Junction temperature2 Lead temperature Tmb ≤ 25 ˚C Tmb ≤ 100 ˚C Tmb ≤ 25 ˚C Tmb = 25 ˚C continuous during soldering CONDITIONS VIS = 0 V VIS =
BUK104-50L/S BUK104-50LP/SP
MIN. 0 0 0 -55 -
MAX. 50 11 11 11 7 5 15 13 9.5 8.5 60 54 40 150 150 250
UNIT V V V V V A A A W ˚C ˚C ˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply connected, TOPFET can protect itself from two types of overload over temperature and short circuit load. SYMBOL VPSP PARAMETER Protection supply voltage
3
An n-MOS transistor turns on between the input and source to quickly discharge the power MOSFET gate capacitance. CONDITIONS
For internal overload protection to remain latched while the control circuit is high, external.