Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
GENERAL DESCRIPTION
High-volt...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUJ403A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated
npn power switching
transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.15 15.5 170 MAX. 1200 1200 550 6 10 100 1.0 300 UNIT V V V A A W V ns
Tmb ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 3 A; VCE = 5 V IC=2.5 A; IB1=0.5 A
PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1200 550 1200 6 10 3 5 100 150 150 UNIT V V V A A A A...