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BUH515

ST Microelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

® BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACK...


ST Microelectronics

BUH515

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® BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS s SWITCH MODE POWER SUPPLIES 1 3 2 DESCRIPTION The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 8 12 5 8 50 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 November 1999 BUH515 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 C o Min. Typ . Max. 0.2 2 100 Un it mA mA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V C...




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