DISCRETE SEMICONDUCTORS
DATA SHEET
BU4508AF Silicon Diffused Power Transistor
Product specification Supersedes data of ...
DISCRETE SEMICONDUCTORS
DATA SHEET
BU4508AF Silicon Diffused Power
Transistor
Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU4508AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 5.0 4.0 0.35 0.17 MAX. 1500 800 8 15 45 3.0 0.48 UNIT V V A A W V A A µs µs
Ths ≤ 25 ˚C IC = 5.0 A; IB = 1.25 A f = 16kHz f = 64kHz ICsat = 5A; f = 16kHz ICsat = 4A; f = 64kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage...