BU406 — NPN Epitaxial Silicon Transistor
September 2013
BU406 NPN Epitaxial Silicon Transistor
Features
• High-Voltag...
BU406 —
NPN Epitaxial Silicon
Transistor
September 2013
BU406
NPN Epitaxial Silicon
Transistor
Features
High-Voltage Capability High Switching Speed Low Saturation Voltage
Applications
Horizontal deflection for TV and CRT
Description
The BU406 is a 400 V 7 A Silicon Epitaxial Planar
NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.
1 TO-220 1.Base 2.Collector 3.Emitter
Ordering Information
Part Number BU406
BU406TU
Marking BU406 BU406
Package TO-220 3L
Packing Method Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCBO VCEO VEBO
IC ICP IB PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
400 200
6 7 10 4 60 150 - 55 to 150
V V V A A A W °C °C
© 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1
1
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