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BU2722AF

NXP

Silicon Diffused Power Transistor


Description
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA ...



NXP

BU2722AF

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