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BU2523DF Dataheets PDF



Part Number BU2523DF
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2523DF DatasheetBU2523DF Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 5.5 0.15 MAX. 1500 800 11 29 45 5.0 2.2 0.3 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.1 A f = 64 kHz IF = 5.5 A ICsat = 5.5 A; f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 175 7 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust Rbe VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6.0 V; IC = 0 A IB = 600 mA IB = 0 A; IC = 100 mA; L = 25 mH VEB = 7.5 V IC = 5.5 A; IB = 1.1 A IC = 5.5 A; IB = 1.1 A IC = 1.0 A; VCE = 5 V IC = 5.5 A; VCE = 5 V IF = 5.5 A MIN. 80 7.5 800 5 - TYP. 130 13.5 46 12 7.5 - MAX. 1.0 2.0 170 5.0 1.0 10.8 2.2 UNIT mA mA mA V V Ω V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (64 kHz line deflection circuit) CONDITIONS ICsat = 5.5 A; LC = 200 µH; Cfb = 4 nF; VCC = 145 V; IB(end) = 0.56 A; LB = 0.4 µH; -VBB = -4 V; -IBM = 3.3 A 1.5 0.15 IF = 5.5 A; dIF/dt = 50 A/µs VF = 5 V 16.5 375 2 0.3 µs µs V ns TYP. MAX. UNIT ts tf Vfr tfr Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB I B end t 5 us 6.5 us D.U.T. IBend LB Cfb Rbe 16 us VCE t -VBB Fig.1. Switching times waveforms. Fig.4. Switching times test circuit. ICsat 90 % IC 100 hFE VCE = 1 V BU2523DF/X Ths = 25 C Ths = 85 C 10 % tf ts IB IBend t 10 t 1 0.01 - IBM 0.1 1 10 IC / A 100 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. hFE = f (IC) VCE = 1 V I F I hFE BU2523DF/X Ths = 25 C Ths = 85 C F 100 VCE = 5 V 10% t fr V F time 10 5V V F time V fr 1 0.01 0.1 1 10 IC / A 100 Fig.3. Definition of anti-parallel diode Vfr and tfr. Fig.6. High and low DC current gain. hFE = f (IC) VCE = 5 V September 1997 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF 10 VCEsat / V Ths = 25 C Ths = 85 C BU2523DF/X 5 ts/tf / us BU2523AF/DF/AX/DX 4 1 IC/IB = 10 IC/IB = 5 0.1 1 3 2 0.01 0.1 1 10 IC / A 100 0 0 0.5 1 1.5 IB / A 2 Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz Normalised Power Derating with heatsink compound VBEsat / V 1.2 BU2523DF/X Ths = 25 C Ths = 85 C IC = 6 A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% 1.1 1 0.9 0.8 IC = 4.5 A.


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