Document
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 2.2 0.4 UNIT V V A A W V A V µs
Ths ≤ 25 ˚C IC = 4.5 A; IB = 0.9 A f = 56 kHz IF = 4.5 A ICsat = 4.5 A; f = 56 kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 9 20 5 7.5 125 6 45 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust Rbe VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6 V; IC = 0 A IB = 600 mA IB = 0 A; IC = 100 mA; L = 25 mH VEB = 6 V IC = 4.5 A; IB = 0.9 A IC = 4.5 A; IB = 0.9 A IC = 1.0 A; VCE = 5 V IC = 4.5 A; VCE = 5 V IF = 4.5 A
MIN. 7.5 800 5 -
TYP. 130 13.5 46 13 8 -
MAX. 1.0 2.0 5.0 1.0 10.2 2.2
UNIT mA mA mA V V Ω V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (56 kHz line deflection circuit) ts tf Vfr tfr Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time IF = 4.5 A; dIF/dt = 50 A/µs VF = 5 V CONDITIONS ICsat = 4.5 A; LC = 250 µH; Cfb = 4 nF; IB(end) = 0.65 A; LB = 1.5 µH; -VBB = -4 V; -IBM = 2.7 A 2.2 0.2 17 360 3.0 0.4 µs µs V ns TYP. MAX. UNIT
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
Lc
IB IBend t 8.8us
D.U.T. IBend LB Cfb
Rbe
18us VCE
-VBB
t
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
ICsat 90 % IC
100
hFE VCE = 1 V
BU2515DF/X Ths = 25 C Ths = 85 C
10 % tf ts IB IBend
t
10
t
1 0.01
- IBM
0.1
1
10
IC / A
100
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain. hFE = f (IC) VCE = 1 V
I
F
I
hFE
BU2515DF/X Ths = 25 C Ths = 85 C
F
100 VCE = 5 V
10% t fr
V F time
10
5V
V F time
V
fr
1 0.01
0.1
1
10
IC / A
100
Fig.3. Definition of anti-parallel diode Vfr and tfr.
Fig.6. High and low DC current gain. hFE = f (IC) VCE = 5 V
September 1997
3
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
10
VCEsat / V Ths = 25 C Ths = 85 C
BU2515DF/X
5
ts/tf / us
BU2515AF/DF/AX/DX
4
1
IC/IB = 10
3
IC/IB = 5 0.1
2
1
0.01 0.1
1
10
IC / A
100
0
0
0.5
1
1.5
IB / A
2
Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); IC = 4.5 A; Tj = 85˚C; f = 56 kHz
Normalised Power Derating
with heatsink compound
VBEsat / V 1.2
BU2515DF/AX Ths = 25 C Ths = 85 C IC = 6 A
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
1.1
1
0.9
0.8 IC = 4 A 0.7
0.6
0
1
2
3
IB / A
4
0
20
40
60
80 Ths / C.