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Datasheet BTS737S3 Smart High-Side Power Switch Four Channels: 4 x 35mΩ Advanced Current Sense
Product Summary
Operating Voltage Vbb(on) Active channels one On-state Resistance RON 35mΩ Nominal load current IL(NOM) 5.4A Current limitation IL(SCr) 40A 5.0 ...40V four parallel 9mΩ 11.1A 40A
Package
P-DSO-28
General Description
• • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions
Applications
• • • • µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• • • • • Very low standby current Improved electromagnetic compatibility (EMC) CMOS compatible input Stable behaviour at undervoltage Wide operating voltage range
Protection Functions
• • • • • • • • Short circuit protection Overload protection Current limitation Thermal shutdown Reverse battery protection with external resistor Overvoltage protection with external resistor (incl. load dump) Loss of ground protection Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN1 IS1 IS2 IN2 Load 2 IN3 IS3 IS4 IN4 Logic Channel 3 Channel 4
Logic Channel 1 Channel 2
Load 1
Diagnostic Function • Proportional load current sense (with defined fault signal
during thermal shutdown and current limit)
Load 3
GND
Load 4
Infineon technologies
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2004-Feb-19
Datasheet BTS737S3
Functional diagram
overvoltage protection internal voltage
IN1
logic
gate control + charge pump
current limit
VBB
clamp for inductive load
OUT1
ESD
IS1
temperature sensor Proportional sense current
LOAD
.
channel 1
IN2 IS2 GND1/2
control and protection circuit of channel 2
OUT2
IN3 IS3
control and protection circuit of channel 3
OUT3
IN4 IS4 GND3/4
control and protection circuit of channel 4
OUT4
Infineon technologies
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2004-Feb-19
Datasheet BTS737S3
Pin Definitions and Functions
Pin Symbol Function 1, 7, 8, Vbb Positive power supply voltage. Design the 14, wiring for the simultaneous max. short circuit 15, 28 currents from channel 1 to 4 and also for low thermal resistance 4 IN1 Input 1,2, 3,4 activates channel 1,2,3,4 in case of logic high signal 3 IN2 11 IN3 10 IN4 25,26,27 OUT1 Output 1,2,3,4 protected high-side power output 22,23,24 OUT2 of channel 1,23,4. Design the wiring for the 19,20,21 OUT3 max. short circuit current 16,17,18 OUT4 5 IS1 Diagnostic feedback 1 .. 4 of channel 1 to 4 Providing a sense current, proportional to the 6 IS2 load current 12 IS3 13 IS4 2 GND1/2 Ground of chip 1 (channel 1,2) 9 GND3/4 Ground of chip 2 (channel 3,4)
Pin configuration
(top view)
Vbb 1 GND1/2 IN2 IN1 IS1 IS2 Vbb GND3/4 IN4 IN3 IS3 IS4 Vbb 2 3 4 5 6 7 9 10 11 12 13 14
•
28 Vbb 27 26 25 24 23 22 20 19 18 17 16 15 OUT1 OUT1 OUT1 OUT2 OUT2 OUT2 OUT3 OUT3 OUT4 OUT4 OUT4 Vbb
Vbb 8
21 OUT3
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2004-Feb-19
Datasheet BTS737S3 Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection1) Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 6) Load dump protection3) VLoadDump = VA + Vs, VA = 13.5 V RI4) = 2 Ω, td = 400 ms; IN = low or high, each channel loaded with RL = 4.7 Ω, Operating temperature range Storage temperature range Power dissipation (DC)6) Ta = 25°C: Ta = 85°C: (all channels active) Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C6), IL = 4.0 A, EAS = 0.8J, 0 Ω one channel: IL = 6.0 A, EAS = 1.0J, 0 Ω two parallel channels: IL = 9.5 A, EAS = 1.5J, 0 Ω four parallel channels:
see diagrams on page 10
Symbol Vbb Vbb IL VLoad dump5) Tj Tstg Ptot
Values 40 36 IL(lim)2 60 -40 ...+150 -55 ...+150 3.7 1.9
Unit V V
V °C W
ZL
33 37 64 1.0 4.0 8.0 -10 ... +16 ±0.3 ±0.3
mH
Electrostatic discharge capability (ESD) IN: (Human Body Model) IS: out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF
VESD
kV
Input voltage (DC) Current through input pin (DC) Current through sense pin (DC)
see internal circuit diagram page 9
VIN IIN IIS
V mA
1) 2) 3) 4) 5) 6)
Single pulse Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75Ω resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb.