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BTS612N1

Siemens Semiconductor Group

Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

BTS 612 N1 Smart Two Channel Highside Power Switch Features • Overload protection • Current limitation • Short circuit ...


Siemens Semiconductor Group

BTS612N1

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Description
BTS 612 N1 Smart Two Channel Highside Power Switch Features Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis Open drain diagnostic output Open load detection in OFF-state CMOS compatible input Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage Vbb(AZ) Vbb(on) 43 5.0 ... 34 both V V channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr) each parallel 200 100 mΩ 2.3 4.4 A 4 4 A TO-220AB/7 Application 7 1 1 7 7 µC compatible power switch with diagnostic Standard feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits Straight leads SMD 1 General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Voltage source Overvoltage protection Current limit 1 Gate 1 protection + V bb 4 V Logic Voltage sensor Level shifter Rectifier 1 Charge pump 1 Charge pump 2 Limit for unclamped ind. loads 1 Open load Short to Vbb det...




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