Smart Lowside Power Switch
HITFET® BTS 133
Smart Lowside Power Switch
Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • O...
Description
HITFET® BTS 133
Smart Lowside Power Switch
Features Logic Level Input Input Protection (ESD) Thermal Shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Status feedback with external input resistor Analog driving possible
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS RDS(on) ID(lim) ID(ISO) EAS
60 50 21 7
V mΩ A A
2000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD M
Drain 2 dv/dt limitation Current lim itation Overvoltage protection
1
IN
ESD
Overload protection
Overtemperature protection
Short circuit circuit Short protection protection Source
3
HIT F ET
®
Semiconductor Group
Page 1
13.07.1998
BTS 133
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V Symbol Value 60 32 mA no limit | IIN | ≤ 2 Unit V
VDS VDS(SC) IIN
VIN < -0.2V or VIN > 10V
Operating temperature Storage temperature Power dissipation
Tj Tstg Ptot EAS
- 40 ... +150 - 55 ... +150 90 2000 3000
°C W m...
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