MOSFET
TEMPFET® BTS 130
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drai...
Description
TEMPFET® BTS 130
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
1 2 3
Pin
1 G
2 D
3 S
Type BTS 130
VDS
50 V
ID
27 A
RDS(on)
0.05 Ω
Package TO-220AB
Ordering Code C67078-A5001-A3
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source peak voltage, aperiodic Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 20 27 7.5 108 80 1200 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V
VDS VDGR Vgs ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25° C Tj = – 55 ... + 150 ° C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
Rth JC Rth JA
1
04.97
TEMPFET® BTS 130
Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 – 3.0 – 3.5
V
VGS = 0, ID = 0.25 mA
Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =17 A Dynamic Characteristics Forwar...
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