MOSFET
TEMPFET®
BTS 120
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The dra...
Description
TEMPFET®
BTS 120
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab
1 2 3
Pin
1 G
2 D
3 S
Type BTS 120
VDS
100 V
ID
19 A
RDS(on)
0.1 Ω
Package TO-220AB
Ordering Code C67078-A5009-A2
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 19 3.5 76 55 800 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
Rth JC Rth JA
Semiconductor Group
1
04.97
BTS 120
Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 100 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 12 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID =12 ...
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