BTH151S-650R

DISCRETE SEMICONDUCTORS DATA SHEET BTH151S-650R Thyristor High Repetitive Surge Product specification March 2001 1;3 Semiconductors Thyristor High Repetitive Surge Product specification BTH151S-650R GENERAL DESCRIPTION Passivated thyristor in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. This thyristor has a high repetitive surge specification which makes it suitable for applications where high inrush currents or stall currents are likely to occur on a repetitive basis. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VDRM, VRRM IT(AV) IT(RMS) ITSM ITRM Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Repetitive peak on-state current 650 7.5 12 110 60 V A A A A PINNING - SOT428 PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode PIN CONFIGURATION tab 2 13 SYMBOL a k g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages half sine wave; - IT(AV) IT(RMS) ITSM ITRM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Average on-state current Tmb ≤ 103 ˚C RMS on-state current all conduction angles Non-repetitive peak on-state current half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms Repetitive peak on-state t = 10ms, τ = 3s, Tmb ≤ 45...